摘要近些年Si半导体功率开关器件性能趋近于其理论极限，逆变焊接电源的进一步发展受到限制，因此需要寻找一种新型的频率更高容量更大的开关器件来代替逆变焊接电源中传统的Si半导体开关器件。以WBG（Wide Band Gap）半导体作为开关器件的焊条电弧焊（Shielded Metal-Arc Welding）逆变电源，其开关频率为50kHz，额定焊接电流160A，相比于传统的SMAW逆变电源具有体积更小，质量更轻，控制性能优越的优点，将会成为逆变焊机未来发展的新方向。 86177

本课题根据总体设计目标和方案选择了全桥式逆变拓扑结构，对功率变换电路中的主变压器、输入整流滤波电路、输出整流电路进行了设计和计算，并且对WBG半导体功率器件进行了选型。确定了逆变拓扑结构和功率变换电路元器件参数，根据所选SiC MOSFET的元器件资料分析其驱动电压及电流，选择合适的驱动电源芯片和驱动芯片，设计了基于IR2110的驱动电路。

最后进行实验的整机安装调试，并且分析了IR2110输出驱动波形测试。结果表明：本文所设计的全桥逆变驱动电路满足驱动时的要求。

毕业论文关键词:  WBG；逆变；功率变换；全桥；驱动电路

Abstract In recent years Si semiconductor power switch device performance close to the theoretical limit chemokines and further development of inverter welding power supply is limited。 Therefore, it is necessary to find a new frequency higher capacity greater switching devices to replace the inverter welding power source in traditional Si semiconductor switching device。 The WBG semiconductor as switching device of arc welding inverter, the switching frequency is 50KHz, rated welding current 160A, compared to the traditional SMAW inverter power supply has smaller size, lighter, superior performance advantages, will become a new direction for the future development of inverter welding machine。

This topic according to the overall design objectives and programs chose a full bridge inverter topology, design and calculation of power conversion circuit of main transformer, input rectifier filter circuit, an output rectifying circuit, and selection of WBG semiconductor power devices。 Then the inverter topology and power conversion circuit components parameters are determined according to the selected SiC MOSFET component data analysis of the driving voltage and current, select the appropriate drive power supply chip and driver chip, design based on IR2110 driver circuit。

Finally, the experiment of the whole machine installation and debugging, and analyzed the IR2110 output drive waveform test。 The results show that the design of the full bridge inverter drive circuit to meet the requirements of the drive。

Keywords: WBG; Inverter; power converter; full bridge; drive circuit 

目  录

第一章 绪论 1

1。1研究背景及意义 1

1。2逆变焊接电源的特点及发展 2

1。2。1逆变焊接电源特点 2

1。2。2 逆变焊接电源的发展 4

1。3 WBG的特点及其发展应用 6

1。3。1 WBG半导体材料定义及其特点 6

1。3。2 SiC MOSFET应用的现阶段成果 7

1。4本课题主要研究内容 8

第二章 总体设计及参数计算 9

2。1 总体设计目标和设计方案 9

2。1。1总体设计目标 9

2。1。2逆变电源总体设计方案