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    摘要石墨烯因其光谱带宽广，响应迅速是制备光电探测器的理想材料。将其与低电导率纳米晶复合可以显著改善其光吸收能力弱的特点。本课题结合纳米晶的光电转换能力和石墨烯优异的导电能力制成复合材料，在光电器件、光催化和太阳能电池方面具有潜在的应用前景。本课题主要以乙酰丙酮锆为原料采用油相法，制备了纳米氧化锆，再通过转移石墨烯到基片上，用真空蒸镀法镀上电极电路，最后旋涂上纳米氧化锆颗粒来组装成紫外光电探测器。通过纳米氧化锆样品的 XRD 图，TEM 图，U.V.曲线图和荧光光谱，观察到了纳米氧化锆具有一定的结晶度，其晶粒尺寸为 3-4nm，且其对波长270nm 的紫外光具有良好的吸收性。 通过样品的I-V曲线图和光响应图，观察到了纳米氧化锆量子点复合石墨烯光电探测器在紫外波段具有一定的响应。拓展了氧化锆的应用范围，使其具有了除氧传感器之外的应用。49110
    毕业论文关键词 石墨烯 纳米晶 氧化锆 油相法 XRD TEM 荧光光谱 光响应
    Title The Preparation and Optoelectronic Characterizations of theGraphene hybrid ultraviolet photodetector
    Abstract Graphene is an appealing material for optoelectronics because it offers severaladvantages compared with other materials，such as wide wavelength range andultrafast conversion of photos to electrical signals. Its weak light absorption can beenhanced by combination of low conductivity nanoparticles as sensitizing centres thatabsorb light efficiently. In this paper, hybrid photodetector is realized usingnanostructured zirconia QDs as light-absorbing media and high mobility of graphene.This hybrid photodetector is potential for the photovoltaic devices， photo catalysis andsolar cells.In this paper, nano zirconia is mainly prepared in organic solution includingzirconium acetyl acetone 1-octadecene and dodecanol. And then transfer graphene tothe substrate chip. The substrate plated the electronic circuit by vaccum depositionmethod can be finally assembled into ultraviolet photodector by spin-coatingnanocrystalline particles on it. XRD spectra verified that these samples are ofzirconia.TEM diagrams of the samples showed that the sizes of particles are about3-4nm. Its perfect absorption of ultraviolet light was confirmed by U.V. curve and PLspectra. Nano zirconia deposited by spin-coating. The relative high ultraviolet light’sresponsivity of Hybrid photodetector which decorated with ZrO2 QDs was verified bythe I-V curve and responsivity(A/W) diagram.
    Keywords ：graphene nanocrystalline zirconia anhydrous synthesisXRD TEM PL spectra responsivity of a photodetector

    目次

    1引言.1

    1.1石墨烯概述..1

    1.1.1石墨烯发展历程..1

    1.1.2石墨烯性能与结构...2

    1.1.3石墨烯的制法.3

    1.1.3.1机械剥离法4

    1.1.3.2还原氧化法或rGO法....4

    1.1.3.3外延生长法5

    1.1.3.4化学气相沉积法..5

    1.1.3.5解链碳纳米管法..6

    1.2氧化锆概述8

    1.2.1氧化锆的性能.8

    1.2.2氧化锆的制法.9

    1.3石墨烯复合光电探测器概述10

    1.3.1光电探测器...10

    1.3.2石墨烯基光电探测器..10

    1.3.3石墨烯基光电探测器研究现状.11

    1.3.3.1金属-石墨烯-金属光电探测器...11

    1.3.3.2石墨烯半导体异质结光电探测器....12

    1.3.3.3石墨烯基热辐射探测器.12

    1.3.3.4复合型光电晶体管....12

    1.3.3.5太赫光电探测器...13

    1.4研究目的及研究内容..13

    2光电探测器的制备14

    2.1纳米氧化锆的制备...14

    2.2石墨烯的转移与光电器件的制备....15

    3光电探测器的性能表征..17

    3.1纳米氧化锆的检测与分析.17

    3.2X射线衍射分析...17

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