毕业设计说明书中文摘要氮化硼薄膜具有高电绝缘特性、高热导率、低热膨胀系数、低介电损耗和不错的压电性质等优点，但在LED中的研究报道较少，如何实现二维的氮化硼薄膜在发光器件中的应用一直是一个研究的难点。本课题研究了在最重要的第三代宽带隙半导体材料p型GaN和n型ZnO的基础上，利用化学气相沉积（CVD）方法生长出具有高绝缘特性的二维BN薄膜作为p-GaN/n-ZnO异质结的中间电子阻挡层，再通过湿法转移和ALD技术制备出了p-GaN/i-BN/n-ZnO异质结发光二极管器件。本次实验的收获是：81228

（1）通过CVD方法控制相关参数制备了性能优良的BN薄膜；

（2）采用多种分析手段进行表征BN薄膜；

（3）制备出p-GaN/i-BN/n-ZnO三明治异质结构;

（4）得到可调控电子输运的LED光电性能器件。

毕业论文关键词：氮化硼  化学气相沉积  p-GaN/i-BN/n-ZnO异质结  LED光电性能

毕业设计说明书外文摘要

Title     Fabrication and performance regulation of two  dimensional   heterojunction light emitting diode 

Abstract Boron nitride film having a high electrical insulation properties, high thermal conductivity, low thermal expansion coefficient, low dielectric loss and good piezoelectric properties, etc。 However, the research on LED is less, and how to realize the application of two dimensional boron nitride thin film in light emitting devices has been a difficult problem。The most important research is based on the third generation of a wide bandgap semiconductor material p-type GaN and n-type ZnO。 Two dimensional BN thin films with high dielectric properties are grown by chemical vapor deposition (CVD) method as the intermediate electron blocking layer of p-GaN/n-ZnO heterojunction，and then p-GaN/i-BN/n-ZnO heterojunction light emitting diode device was prepared by wet method and ALD technique。 The harvest of this experiment is:

(1)The preparation of BN thin films with excellent properties by CVD method;

(2)Characterization of BN thin films by means of a variety of analytical methods;

(3)The p-GaN/i-BN/n-ZnO sandwich structure was prepared;

(4)Get adjustable LED photoelectric properties of electron transport devices。

Keywords Boron nitride Chemical vapor deposition  p-GaN/i-BN/n-ZnO heterojunction  LED photoelectric property

目   次

1  绪论 1

1。1 研究的背景 1

1。2  LED的核心结构和发光原理 2

1。3  p-i-n异质结对于pn异质结的优势 3

1。4 基于p-GaN/n-ZnO异质结加入中间层的相关研究 3

2  氮化硼、氧化锌的制备 7

2。1 氮化硼、氧化锌的制备和表征设备 7

2。1。1 氮化硼制备和表征的设备 7

2。1。2 氧化锌制备的设备 8

2。2异质结的电学性能检测设备 9

2。3实验过程 10

2。3。1 采用化学气相沉积法（CVD）制备高质量单层或少层BN薄膜 10

2。3。2将生长出的BN薄膜无损湿法转移至氮化镓衬底 12

3  CVD生长氮化硼薄膜表征 13

3。1表征氮化硼样品的仪器 13