GaN薄膜光学性能分析+文献综述
毕业论文关键字： a面氮化镓薄膜 c面氮化镓薄膜 拉曼光谱 XRD衍射分析 透过光谱
Research on optical properties of GaN films
Abstract: GaN has a band gap, high thermal conductivity efficiency, large electron saturation drift velocity and low dielectric constant features, is a hot topic at home and abroad in recent years, high-brightness light-emitting diodes, short-wavelength laser diode, high-performance UV detector and areas of high temperature, high-frequency, high-power semiconductor devices such as, in particular, has a wide range of applications in the blue and green light emitting laser device, but so far it is still far from sufficient. The issue in order to better application GaN film on a semiconductor light source, so as to enhance the light emitting properties of the light source, mainly under different conditions (a-plane GaN thin film and c-plane GaN film) of GaN films grown structure and The optical performance of the test, analyze and compare their performance. This paper introduces the preparation of GaN-based semiconductor materials are grown by MOCVD on different substrates GaN film, and then the samples were analyzed by means of different tests, with XRD diffraction analysis of its crystalline quality, the use of Raman spectroscopy gallium nitride thin film on a plane and c-plane GaN film stress testing, Raman scattering can be used for crystal structure determination of materials, understanding of the crystal quality of the material, and thus the material growth will provide some help. Through spectroscopic analysis by its optical properties.
Keywords: a-plane GaN c-plane GaN Raman spectrum XRD diffraction analysis Transmission spectrum
目 录
1 绪论 1
1.1 课题的目的和意义 1
1.2 国内外研究现状与发展趋势 1
1.3 本文的主要内容和安排 2
2 氮化镓薄膜的生长 4
2.1 氮化镓薄膜的性质 4
2.2 氮化镓薄膜的制备 5
2.2.1 金属有机物化学气相沉积（MOCVD）工艺 5
2.2.2 氢化物气相外延（HVPE）技术 7
2.2.3分子束外延（MBE）技术 10
3 XRD衍射分析 11
3.1 XRD衍射分析简介 11
3.2 XRD衍射分析方式 11
3.3 XRD测试结果与分析 12
3.4 晶粒尺寸的计算与分析 14
4 拉曼光谱分析 16
4.1 拉曼光谱研究氮化镓基材料的优势和意义 16
4.2 拉曼光谱的应用 16
4.3 拉曼散射中的应力效应 17
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