NEA GaN光电阴极的响应特性研究
关键词GaN光电阴极 激活评估 逸出几率 光电发射 光谱响应 量子效率
Title Research of NEA GaN photocathode response characteristic
Abstract
Activation device and steps of activation and evaluation of the NEA GaN
photoelectric cathode is introduced In this thesis. The dipole layer formed
on the surface of GaN after the activation with Cs/O is discussed, as the
basis for calculating the escape probability of electron. Through the
formula of escape probability effects of surface barrier( I, II
barrier )had on electron escape probability are analyzed.
According to three emission mechanism of Spicer, at the aspect of
microscopic the detailed process of NEA GaN photoelectric emission theory
is described.
Quantum efficiency formula of the transmissive and reflective NEA GaN
photocathode is deduced based on analysis of the results of the spectral
response test experimental. Factors influencing the cathode quantum
efficiency under different working modes is discussed through the formula,
including Electron escape probability P, electron diffusion length LD,
interface composite rate Sv, cathode emission layer thickness, Te, cathode
materials on the incident light absorption coefficientα, cathode
materials on the reflectance of incident light R.
Keywords GaN photoelectric cathode activation and assess escape
probability photoelectric emission spectral response quantum
efficiency 目次
1 绪论 1
1.1 NEA GaN光电阴极概述 . 1
1.1.1 NEA GaN 阴极光电发射基本原理 1
1.1.2 NEA GaN 阴极结构与工作模式 2
1.2 GaN光电阴极研究现状 . 3
1.3 NEA GaN 光电阴极的应用 . 4
1.3.1 NEA GaN 光电阴极在微弱紫外探测领域的应用 . 4
1.3.2 NEA GaN 光电阴极在真空电子源中应用 5
1.4 本文研究背景和意义 . 6
1.4.1本文研究背景 . 6
1.4.2本文研究依据及意义 . 7
1.5本文研究的主要工作 7
2 NEA GaN光电阴极的光电发射机理 8
2.1概述 8
2.2 NEA GaN光电阴极光电发射过程 . 11
2.2.1光电子激发 11
2.2.2光电子往阴极表面的输运 12
2.2.3光电子隧穿表面势垒 13
3．NEA GaN激活工艺及光电阴极表面势垒对电子逸出几率影响 14
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