Co掺杂含量对SiC薄膜电性能的影响
关键词: Co掺杂；SiC薄膜；电性能影响
The Influence of Co Doping Content of Sic Thin Film Performance
Abstract: With the rapid development of technology, information age is coming. Information processing and storage becomes increasingly important. Semiconductor devices is a good option for information storage. SiC is a new type of semiconductor material which is widely use in many application while it is receiving more and more concern. In this paper, Co doped SiC thin film crystal structure, surface morphology are study, film thickness and electrical transport properties. The different concentration of CO doped SiC thin film prepared by R. F. magnetron sputtering. X-ray diffractometer test SiC thin film crystal structure, and result shows that there is second phase in the compound. When test the surface and side of thin film by a Scanning Electron Microscope, result shows that the Co doping Concentration is greater, the thin film surface is rougher. It was from the curve drawing for current- voltage (I-V) of different thin film as well as the temperature change with resistivity (ρ-T). that is to say that there is no CO cluster formed in thin film, semiconductor property still remain.
Key Words: Co doping; SiC thin film; Electrical effects
目录
摘要 1
引言 2
1. SiC晶体简介 2
2. SiC薄膜的制备的实验 3
3. Co掺杂SiC薄膜的结构分析 5
3.1Co掺杂SiC薄膜的掺杂含量 5
3.2Co掺杂SiC薄膜的晶体结构 5
4. Co掺杂SiC薄膜的表征和电性能 6
4.1Co掺杂SiC薄膜的表面形貌 6
4.2Co掺杂SiC薄膜的膜厚 7
4.3不同浓度Co掺杂SiC薄膜的I-V曲线 8
4.4不同浓度Co掺杂SiC薄膜的ρ-T曲线 8
5. 结论 8
参考文献 9
致谢 10
Co掺杂含量对SiC薄膜电性能的影响
引言目前我国的信息技术快速蓬勃发展，使得自旋电子学这一新兴学科受到了人们的重视。相应的作为半导体器件的自旋电子器件也随其快速发展和应用[1]。自旋电子器件与传统的电子器件相比，有很大的进步，不仅有着能量消耗小、器件体积比较小、速度快的优点[2]，同时还具有较高的稳定性和信息储存的可靠性，自旋电子器件的诸多优点在最新一代的电子器件的研制和开发中提供了尤为重要的条件优势和更加新颖的思路。SiC是目前发展最为成熟的宽禁带半导体材料[3]，具有很多有益的物理性能，其各种优点使得其拥有很大的应用潜能。很多国家相继对Sic进行大量的研究，目前为止已发现，Cr 和Mn 掺杂的SiC具有稳定的铁磁性和好的半金属性质[4]，Co元素掺杂SiC晶体制成的半导体材料，其载流子的迁移率得到了大大的提高，这也恰好满足自旋电子器件所需要满足的要求。Wang等人制取出Mn掺杂SiC稀磁半导体样品是运用在SiC晶片上沉积Mn的方法[5]，从而得到在退火后观测到样品具有室温铁磁性的结论。该论文是着重研究不同浓度Co掺杂SiC薄膜的电性能，同时也观察SiC晶体的结构、表面的形状以及SiC薄膜的厚度。
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