相变金属界面传热强化技术研究+文献综述
以聚乙烯吡咯烷酮(PVP)为保护剂，在加热的情况下，通过超声粉碎法制得了粒径为50~ 80nm的镓纳米粒子。然后以硼氢化钠和抗坏血酸为还原剂，在分散着镓纳米粒子的溶液中利用两步还原法制备镓锡纳米粒子。
以PVP为保护剂，EDTA-2Na为络合剂,NaBH4为还原剂, 在已经制备的镓锡纳米粒子基础上，制备镓铟锡合金。最后利用DSC得到所制备的镓铟锡合金的熔点。
将制得的镓铟锡合金超细粉末、混合溶剂经混合研磨制得实验所需浆料，并通过丝网印刷、预处理等得到镓铟锡薄膜。9740
关键词 低熔点合金 热界面材料 界面热阻 金属间化合物
毕业设计说明书（论文）外文摘要
Title Study on the Technique of Phase Change Metal Interface Heat Transfer Enhancement
Abstract
In this study, three low melting point alloys with the component in mass percent of 68Ga20In12Sn and 26.5Ga17.0In56.5Sn were chosen to investigate properties of the thermal conductivity and structure, with a combination use of ultrasonic crushing and chemical reduction method. Also, the change of the crystal morphology, performance and composition etc. are studied.
The nano gallium particles, under heated conditions, were prepared by ultrasonic crushing method with polyvinylpyrrolidone used as protective agent. Then, in aqueous solution, the nano particles of Ga-Sn were prepared by two-step reduction, with sodium borohydride and ascorbic acid as the reducing agent. The melting point of Ga-In-Sn nano particles are also characterized by DSC.
The Ga-In-Sn alloy ultrafine was synthesized with sodium borohytride used as the reducing agent, EDTA-2Na as complexing agent, and polyvinylpyrrolidone as protective agent, in the preparation of gallium-tin alloy nano particle.
The paste was prepared by mixing solvent and Ga-In-Sn ultrafine powder. And the thin film can be made from screen printing of the paste and drying.
Key words： low melting alloy thermal interface material thermal interface resistance Intermetallic Compound
目 次
1 绪论 1
1.1 电子封装技术的发展 1
1.2 电子封装的无铅化 3
1.3 电子封装中的热管理 6
1.4 热界面材料及其应用 6
1.4.1 导热硅脂 8
1.4.2 导热凝胶 8
1.4.3 相变材料 9
1.4.4 焊料 9
1.4.5 相变金属合金 10
1.5 本文研究的内容及意义 10
2 镓锡纳米粒子的制备 11
2.1 前言 11
2.2 实验部分 11
2.2.1 三种金属基本属性 11
2.2.2 实验仪器及试剂 11
2.2.3 实验原理 12
2.2.4 超声制备纳米镓粒子 13
2.2.5 制备镓锡纳米粒子 14
2.2.6 纳米粒子的表征 15
2.3 结果与讨论 15
2.3.1 对镓纳米粒子改性前后的分析 15
2.4 结论 16